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Computational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System

机译:基底系统上碳带生长中硅膜生长的接触凝固计算研究

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Ribbon growth on substrate (RGS) has emerged as a new method for growing silicon films at low cost for photovoltaic applications by contact solidification. Thermal conditions play an important role in determining the thickness and quality of the as-grown films. In this study, we have developed a mathematical model for heat transfer, fluid flow, and solidification in the RGS process. In particular, a semi-analytical approach is used in this model to predict solidification with a sharp solid-liquid interface without using a moving grid system. A more realistic analytical relationship that considers the varying rate of heat removal at the interface has been developed to evaluate the effective heat transfer rate, solidification rate, and solidification front. These models were used to predict the flow patterns in the crucible, the temperature distributions in the system, the velocity fields in the crucible, the solidification rates, and the film thicknesses. The effects of important operational parameters, such as pulling speed, preheat temperature, and thermal properties of the substrate material, have been examined. In addition, an order of magnitude analysis has been performed to understand heat transfer in the growing film and substrate. This analysis leads to a simplified mathematical model for heat transfer and solidification, which can be resolved analytically to derive theoretical solutions for the effective heat transfer coefficient, the rate of solidification, and the film thickness. The results show that the solidification rate varies largely on the substrate. The non-uniformity can be mitigated by altering the temperature distribution in the silicon melt through manipulating heat generation in the top heater. The rates of solidification and film thickness are very sensitive to both the thermal conductivity and preheat temperature of the substrate. Increasing pulling velocity will increase the rate of solidification at the leading edge but reduce the film thickness. The numerical model and the theoretical solution provide an important tool for thermal design and optimization of the RGS system.
机译:基板上的碳带生长(RGS)已经成为一种通过接触固化以低成本在光伏应用中生长硅膜的新方法。热条件在确定所成膜的厚度和质量方面起着重要作用。在这项研究中,我们为RGS过程中的传热,流体流动和固化建立了数学模型。特别是,在此模型中使用半分析方法来预测具有尖锐固液界面的凝固,而无需使用移动网格系统。已经开发出一种更现实的分析关系,该关系考虑了界面处的除热速率的变化,以评估有效的传热速率,凝固速率和凝固前沿。这些模型用于预测坩埚中的流动模式,系统中的温度分布,坩埚中的速度场,凝固速率和膜厚。已经检查了重要操作参数的影响,例如提拉速度,预热温度和基材的热性能。另外,已经进行了数量级分析以了解在生长的膜和基板中的热传递。通过此分析,可以简化传热和凝固的数学模型,可以对其进行解析解析,以得出有效传热系数,凝固速率和膜厚的理论解。结果表明,固化速度在基材上变化很大。可以通过控制顶部加热器中的热量产生来改变硅熔体中的温度分布,从而减轻不均匀性。固化速率和膜厚对基材的导热率和预热温度都非常敏感。提拉速度的增加将增加前缘的固化速率,但会减小薄膜厚度。数值模型和理论解为RGS系统的热设计和优化提供了重要的工具。

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