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首页> 外文期刊>Journal of the Korean Physical Society >Field Emission from TiO_2/Ti Nanotube Array Films Modifiedwith Carbon Nanotubes
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Field Emission from TiO_2/Ti Nanotube Array Films Modifiedwith Carbon Nanotubes

机译:碳纳米管修饰的TiO_2 / Ti纳米管阵列薄膜的场发射

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摘要

Well-aligned TiO_2/Ti nanotube array films were synthesized by using anodic oxidation of titaniumin 0.5-wt% HF and were modified with carbon nanotubes (CNTs) assembled by using catalyzedchemical vapor deposition (CVD) at 650 °C. The morphology and the quality of the films wereassessed with field emission scanning electron microscopy and Raman spectrometry (325 nm). Thefield emission characteristics of such TiO_2/Ti nanostructures were investigated before and afterbeing modified with CNTs. The results show that the TiO_2/Ti nanotube arrays possess a moderateturn-on electric field of 7.4 V/μm, a field emission current density of 2.7 mA/cm~2at 23 V/μm. It isnoteworthy that the turn-on field of the TiO_2/Ti nanotube arrays modified with CNTs is decreasedsignificantly to 1.3 V/μm, and the emission current density is increased to 10 mA/cm~2at 5.6 V/μm.This novel structure shows high emission efficiency as a field emitter.
机译:通过在0.5 wt%的HF中对钛进行阳极氧化,合成了取向良好的TiO_2 / Ti纳米管阵列膜,并在650°C的条件下通过用催化化学气相沉积(CVD)组装的碳纳米管(CNT)对其进行了改性。用场发射扫描电子显微镜和拉曼光谱法(325nm)评估膜的形态和质量。研究了碳纳米管修饰前后TiO_2 / Ti纳米结构的场发射特性。结果表明,TiO_2 / Ti纳米管阵列具有7.4 V /μm的适度开启电场,在23 V /μm时的场发射电流密度为2.7 mA / cm〜2。值得注意的是,碳纳米管修饰的TiO_2 / Ti纳米管阵列的开启场显着降低至1.3 V /μm,发射电流密度在5.6 V /μm时增加至10 mA / cm〜2。场发射器的发射效率。

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