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首页> 外文期刊>Journal of the Korean Physical Society >Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach
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Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

机译:在有机发光二极管中插入空穴注入层的影响:一种数值方法

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摘要

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq(3) (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.
机译:为了研究插入空穴注入层(HIL)的效果,我们进行了计算研究,涉及具有薄CuPc层作为空穴注入层的有机发光二极管(OLED)。我们将S-TAD(2,2',7,7'-四-(N,Ndiphenylamino)-9,9-spirbibifluoren)用于空穴传输层,S-DPVBi(4,4'-bis(2,2 '-二苯基乙烯基)-1,1'-螺代联苯)用作发射层,Alq(3)(三(8-羟基喹啉基)铝)用于电子传输层。将该三层设备与四层设备进行了比较。在此三层器件中,我们添加了一个薄的CuPc层作为空穴注入层,该层的最高占据分子轨道(HOMO)值为5.3 eV,未占据分子轨道(LUMO)最低为3.8 eV,我们选择了该层同样,我们更改了薄CuPc层的LUMO级别或HOMO级别。这两个设备分别被标识为设备C和设备D。在本文中,我们模拟了这四种设备中的载流子注入,运输和重组。因此,我们展示了HIL的效果,并且我们证明了通过在阳极和HTL之间添加一层CuPc可以改善这些器件的特性。

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