Effect of Annealing Temperature on Microstructure and Electrical Properties of TiW Thin Films

摘要

This paper presents effect of annealing temperature on microstructure and electrical properties of TiW thin films deposited at a room temperature using a RF sputtering system. The above properties are investigated using X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) technique. The SEM and XRD investigations show films consists of circular grains and crystals are oriented in (110) and (200) direction. An increase in grain size is observed on annealed contact films as compared to as-deposited films as investigated from SEM analysis; this result is in agreement with the XRD result. The contacts annealed at 600℃ shows a resistivity of 1.5 mΩ cm at room temperature and an improved ohmic property as compared to as-deposited ones.