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首页> 外文期刊>Journal of the European Ceramic Society >Physical characterization and arcjet oxidation of hafnium-based ultra high temperature ceramics fabricated by hot pressing and field-assisted sintering
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Physical characterization and arcjet oxidation of hafnium-based ultra high temperature ceramics fabricated by hot pressing and field-assisted sintering

机译:热压和场辅助烧结制备ha基超高温陶瓷的物理表征和电弧喷射氧化

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摘要

For this study, HfB_2-based ultra high temperature ceramic (UHTC) samples were prepared by hot pressing and field-assisted sintering (FAS) with 10-20 vol.% SiC (baseline), 5 vol.% TaSi_2 , and 5 vol.% iridium. Dense billets were tested for hardness and mechanical strength. When compared, theFAS method consistently yielded materials with a grain size 1.5-2 times finer than samples processed via hot pressing. In general, room temperatureflexural strengths of these materials were found to be lower (~400 MPa) than similar fully dense HfB2- SiC materials, with strengths between 500 and 700 MPa. Oxidation resistance testing of flat-face models was conducted in a simulated re-entry environment, at Qcold Wall ~250W/cm~2 min. Samples processed by FAS had reduced oxide thickness and SiC depletion zones compared to the baseline HfB_2-20SiC material. In allcases oxide thickness was reduced by ~3 × and SiC depletion zone thickness was reduced ~3 × over the baseline.
机译:在本研究中,通过热压和现场辅助烧结(FAS)制备HfB_2基超高温陶瓷(UHTC)样品,其中含10-20%(体积)的SiC(基线),5%(体积)的TaSi_2和5%(体积)。铱。测试了密实坯料的硬度和机械强度。与之相比,FAS方法始终可以生产出比通过热压处理的样品细1.5至2倍粒度的材料。通常,发现这些材料的室温弯曲强度(〜400 MPa)低于类似的完全致密的HfB2- SiC材料(500至700 MPa)。在模拟的重入环境中,在Qcold Wall〜250W / cm〜2 min的条件下进行了平面模型的抗氧化性测试。与基线HfB_2-20SiC材料相比,通过FAS处理的样品具有减少的氧化物厚度和SiC耗尽区。在所有情况下,氧化物厚度都比基线降低了〜3倍,SiC耗尽区的厚度降低了约3倍。

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