Low temperature firing of BiSbO_4 microwave dielectric ceramic with B_2O_3-CuO addition

摘要

The influence of B_2O_3-Cu0 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO_4 ceramic have been investigated. The BiSbO_4 ceramics can be well densified to approach above 95 percent theoretical density in the sintering temperature range from 840 to 960 DEG C as the addition amount of B_2O_3-Cu0 increases from 0.6 to 1.2 wt. percent . Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity epsilon_r saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/ deg C at sintering temperature around 930 DEG C. Lowering sintering temperature of BiSbo_4 ceramics makes it possible for application in low temperature co-fired ceramic technology.