首页> 外文期刊>Journal of the Chemical Society, Dalton Transactions. Inorganic Chemistry >H-bridged A(3)H(3)(+) (A=Si and Ge): A pi-ligand in organometallic chemistry
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H-bridged A(3)H(3)(+) (A=Si and Ge): A pi-ligand in organometallic chemistry

机译:H桥A(3)H(3)(+)(A = Si和Ge):有机金属化学中的pi配体

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Organometallic complexes based on H-bridged Si3H3+ and Ge3H3+ ligands were studied at the B3LYP and B3P86 levels. Relativistic effective core potentials (SBKJC-21G and Stuttgart-RSC) and their associated basis sets were used on metals and the 6-31G(d) basis set was used on ligands. All the complexes (A(3)H(3))Co(CO)(3) (9, C-3v), (A(3)H(3))Rh(CO)(3) (10, C-3v) and (A(3)H(3))Ir(CO)(3) (11, C-3v) (A = Si and Ge) are minima and more stable than the complexes based on Si3H3+ and Ge3H3+ ligands with terminal hydrogens (9a-11a). The stability of the bridged systems increases from Si to Ge. Isolobal and isosynaptic analogies connect these complexes with other organometallic complexes (e.g. (mu-H)(3)Fe-3 (CO)(9) (mu(3)-CMe)) and main group pyramidal systems (e. g. (mu-H)(3)B3H3 (mu(3)-CH)). [References: 61]
机译:在B3LYP和B3P86水平研究了基于H桥Si3H3 +和Ge3H3 +配体的有机金属配合物。相对论有效核心电势(SBKJC-21G和斯图加特-RSC)及其相关的基础集用于金属,6-31G(d)基础集用于配体。所有复合物(A(3)H(3))Co(CO)(3)(9,C-3v),(A(3)H(3))Rh(CO)(3)(10,C- 3v)和(A(3)H(3))Ir(CO)(3)(11,C-3v)(A = Si和Ge)比基于具有端基的Si3H3 +和Ge3H3 +配体的配合物最小且更稳定氢(9a-11a)。桥接系统的稳定性从Si提高到Ge。等渗和等突触类似物将这些配合物与其他有机金属配合物(例如(mu-H)(3)Fe-3(CO)(9)(mu(3)-CMe))和主族金字塔系统(例如(mu-H )(3)B3H3(mu(3)-CH))。 [参考:61]

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