MOS structure fabrication by thermal oxidation of multilayer metal thin films

摘要

A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported. The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel—chromium alloy. This two-layer structure was thermally oxidized at 400℃ for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate. Using deposition parameters, device dimensions and SEM micrographs of the layers, the device parameters were calculated. The resultant MOS structure was characterized by a C— V curve method. From this curve, the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and —2.9 V, respectively, which are in the order of model-based calculations.