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首页> 外文期刊>Journal of Semiconductors >The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)
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The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)

机译:双极场效应晶体管:VIII。纵向电场的纵向梯度(纯基上的两个MOS门)

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摘要

This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 μm at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.
机译:本文从具有纯基极和两个以单极(电子)电流模式工作的MOS栅极的双极型场效应晶体管(BiFET)中的纵向电场的纵向梯度中评估电流项。这些nMOS-BiFET被称为nMOS-FinFET,与它们在室温下的约25μm的固有德拜长度相比,通常具有电短路通道。这些纵向电流项是重要的短通道电流分量,在计算长通道电气特性时已将其忽略。本文表明,当物理通道长度小于100 nm时,纵向电流项会大大改变长通道电特性。

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