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首页> 外文期刊>Journal of Semiconductors >Non-ionic surfactant on particles removal in post-CMP cleaning
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Non-ionic surfactant on particles removal in post-CMP cleaning

机译:非离子表面活性剂对CMP后清洁的去除作用

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The effect of a non-ionic surfactant on particles removal in post-CMP cleaning was investigated. By changing the concentration of the non-ionic surfactant, a series of experiments were performed on the 12 inch Cu pattern wafers in order to determine the best cleaning results. Then the effect of the surfactant on the reduction of defects and the removal of particles was discussed in this paper. What is more, the negative effect of a non-ionic surfactant was also discussed. Based on the experiment results, it is concluded that the non-ionic surfactant could cause good and ill effects at different concentrations in the post-CMP cleaning process. This understanding will serve as a guide to how much surfactant should be added in order to achieve excellent cleaning performance.
机译:研究了非离子表面活性剂对CMP后清洗中颗粒去除的影响。通过改变非离子表面活性剂的浓度,对12英寸Cu图案晶片进行了一系列实验,以确定最佳清洁效果。然后讨论了表面活性剂对减少缺陷和去除颗粒的作用。此外,还讨论了非离子表面活性剂的负面影响。根据实验结果,可以得出结论,在CMP后清洗过程中,非离子表面活性剂可能在不同浓度下产生良好的效果。这种理解将为应添加多少表面活性​​剂以实现出色的清洁性能提供指导。

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