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A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

机译:采用0.13μmCMOS技术的低杂散,低抖动10GHz锁相环

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This paper presents a 10-GHz low spur and low jitter phase-locked loop (PLL). An improved low phase noise VCO and a dynamic phase frequency detector with a short delay reset time are employed to reduce the noise of the PLL. We also discuss the methodology to optimize the high frequency prescaler's noise and the charge pump's current mismatch. The chip was fabricated in a SMIC 0.13-μm RF CMOS process with a 1.2-V power supply. The measured integrated RMS jitter is 757 fs (1 kHz to 10 MHz); the phase noise is —89 and —118.1 dBc/Hz at 10 kHz and 1 MHz frequency offset, respectively; and the reference frequency spur is below —77 dBc. The chip size is 0.32 mm2 and the power consumption is 30.6 mW.
机译:本文提出了一种10 GHz低杂散和低抖动锁相环(PLL)。采用了改进的低相位噪声VCO和具有短延迟复位时间的动态相位频率检测器来降低PLL的噪声。我们还将讨论优化高频预分频器噪声和电荷泵电流失配的方法。该芯片采用SMIC0.13-μmRF CMOS工艺制造,电源电压为1.2V。测得的集成RMS抖动为757 fs(1 kHz至10 MHz);在10 kHz和1 MHz频率偏移下,相位噪声分别为—89和—118.1 dBc / Hz;并且参考频率杂散低于—77 dBc。芯片尺寸为0.32 mm2,功耗为30.6 mW。

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