Effect of the interface resistance on the extraordinary magnetoresistance of semiconductor/metal hybrid structures

摘要

We report on magnetotransport experiments performed at 4.2 K on hybrid structures consisting of a metal and a mesoscopic two-dimensional electron system in an InAs/InGaAs heterostructure. The devices were fabricated using cleaved-edge overgrowth. We find that they exhibit an extraordinary magnetoresistance effect (EMR) which is most pronounced in the case of the lowest specific contact resistance p, of ≈10-{sup}(-8)Ωcm{sup}2 achieved in this work. The largest relative resistance change △R/ R is 115,000% at a magnetic field B=1 T. A systematic study of the performance of the EMR devices with down to sub-μm lateral dimension and with different p{sub}i, is reported.