Extraordinary Magnetoresistance in Two and Three Dimensional Metal-Semiconductor Hybrid Structures

摘要

The extraordinary magnetoresistance (EMR) in metal-semiconductor hybrid structures depends on the orbital motion of carriers in an external magnetic field, and the remarkably high magnetoresistance response observed suggests that the geometry of the metallic inclusion can be optimized to significantly enhance the EMR. While the original demonstration of EMR was done with a circular semiconductor device with a concentric metallic inclusion in it, here we consider the theory and simulations to achieve optimization in 2D and 3D structures in an external magnetic field. Examples of new structures in 2D and 3D are given together with their expected responses in terms of EMR.