Damages on single-crystal silicon under the action of a powerful proton-carbon beam of nanosecond duration have been studied. The formation of various surface structures at a beam current density of less than 100 A/cm ~2 has been observed. The morphological features of these structures have been described and the effect of natural dioxide silicon on their formation has been considered.
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机译:研究了在纳秒级强大的质子碳束作用下对单晶硅的破坏。已经观察到在小于100A / cm 2的束电流密度下形成各种表面结构。已经描述了这些结构的形态特征,并考虑了天然二氧化硅对其形成的影响。
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