Mechanisms of Dislocation Generation in Si Structures with Strained Layers: Intrinsic Point Defects in Dislocation Nucleation

摘要

The peculiarities of dislocation production in silicon compositions with elastically strained layersfabricated by the molecular-beam epitaxy technique (SiGe/Si heterostructures) and by direct bonding ofSi(110)/Si(100) wafers are studied with transmission electron microscopy. The role of intrinsic point defectsduring the process of nucleation of misfit dislocations is explained. The surplus concentration of these defectsin heterostructures was produced via low-temperature epitaxial growth of buffer layers or with ion implantationof elastically strained heterostructures. The model of "optimal" and "inverse" intrinsic point defects providingan explanation for the relaxation of misfit strains in heterostructures is proposed.