Misfit Dislocation Generation In Sige Epitaxial Layers Supersaturated With Intrinsic Point Defects

摘要

Misfit dislocation generation in SiGe/Si(001) heterostructures supersaturated with the vacancies (LT epitaxial growth) or self-interstitials (ion implantation) was studied by transmission electron microscopy. A model of "optimal" intrinsic point defects (IPDs) for effective strain relaxation is suggested and verified. Super-saturation of compressed SiGe layers with the vacancies ("optimal" IPDs) promotes high strain relaxation, whereas supersaturation with the self-interstitials ("inverse" IPDs) promotes a generation of V-shaped TDs which cannot extend to form MDs.