On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

摘要

Highly perfect epitaxial heterostructure CoSi _2 films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing of epitaxial films at T = 900-950 K leads to the formation of new CoSi _2/Si(111)-2 × 2 and CoSi _2/Si(100)-2 × 4 superstructures.