首页> 外文期刊>Journal of solid state electrochemistry >Electrode material dependent p- or n-like thermoelectric behavior of single electrochemically synthesized poly(2,2 '-bithiophene) layer-application to thin film thermoelectric generator
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Electrode material dependent p- or n-like thermoelectric behavior of single electrochemically synthesized poly(2,2 '-bithiophene) layer-application to thin film thermoelectric generator

机译:单电极电化学合成的聚(2,2'-联噻吩)层的电极材料依赖性p型或n型热电行为-应用于薄膜热电发生器

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摘要

We prepared poly(2,2'aEuro"bithiophene) (PBT) on top of Au and indium-tin oxide (ITO) bottom electrodes and determined the Seebeck coefficient in devices with Al top electrode. Negative Seebeck coefficient was observed in ITO/PBT/Al devices, whereas Au/PBT/Al devices showed positive Seebeck coefficient. This difference allowed the construction of a complete thermoelectric thin film generator with top electrode of Al and bottom electrode of ITO and Au (each one at half of the electrode area) in a single organic layer deposition step. The thermoelectric generator achieves ca. 800 mu V K-1 at room temperature, which is a very high value for conjugated polymer-based devices.
机译:我们在金和氧化铟锡(ITO)底部电极的顶部制备了聚(2,2'aEuro“联噻吩)(PBT),并确定了带有铝顶部电极的器件的塞贝克系数,在ITO / PBT中观察到负塞贝克系数/ Al器件,而Au / PBT / Al器件的塞贝克系数为正,这种差异使得可以构建一个完整的热电薄膜发生器,其上电极为Al,下电极为ITO和Au(每个电极面积的一半)在一个有机层沉积步骤中,热电发生器在室温下可达到约800μV K-1,对于基于共轭聚合物的器件而言,这是非常高的价值。

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