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首页> 外文期刊>Journal of Solid State Chemistry >Bismuth(III) dialkyldithiophosphates: Facile single source precursors for the preparation of bismuth sulfide nanorods and bismuth phosphate thin films
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Bismuth(III) dialkyldithiophosphates: Facile single source precursors for the preparation of bismuth sulfide nanorods and bismuth phosphate thin films

机译:二烷基二硫代磷酸铋(III):用于制备硫化铋纳米棒和磷酸铋薄膜的简便的单一来源前体

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摘要

Two different phase pure materials (Bi_2S_3 and Bi _2P_4O_(13)) have been prepared under different conditions using the same single source precursors. Solvothermal decomposition of the complexes, Bi{S_2P(OR)_2}_3 [where, R = Methyl (Me) (1), Ethyl (Et) (2), n-Propyl (Pr~n) (3) and iso-Propyl (Pr~i) (4)] in ethylene glycol gave orthorhombic bismuth sulfide nanorods, whereas aerosol assisted chemical vapor deposition (AACVD) of the same precursors deposited monoclinic bismuth tetraphosphate (Bi_2P _4O_(13)) thin films on glass substrates. Surface study of the thin films using SEM illustrated the formation of variety of nanoscale morphologies (spherical-, wire-, pendent-, doughnut- and flower-like) at different temperatures. AFM studies were carried out to evaluate quality of the films in terms of uniformity and roughness. Thin films of average roughness as low as 1.4 nm were deposited using these precursors. Photolumines-cence studies of Bi_2P_4O_(13) thin films were also carried out.
机译:使用相同的单一来源前体在不同条件下制备了两种不同相的纯材料(Bi_2S_3和Bi _2P_4O_(13))。配合物Bi {S_2P(OR)_2} _3的溶剂热分解[其中,R =甲基(Me)(1),乙基(Et)(2),正丙基(Pr〜n)(3)和异-乙二醇中的丙基(Pr〜i)(4)产生正交晶的硫化铋纳米棒,而相同前驱物的气溶胶辅助化学气相沉积(AACVD)在玻璃基板上沉积了单斜晶四磷酸铋(Bi_2P _4O_(13))薄膜。使用SEM对薄膜进行的表面研究表明,在不同温度下会形成各种纳米级形态(球形,金属丝,悬垂形,甜甜圈形和花状)。进行了AFM研究,以评估薄膜的均匀性和粗糙度。使用这些前体沉积平均粗糙度低至1.4 nm的薄膜。还对Bi_2P_4O_(13)薄膜进行了光致发光研究。

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