Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques

摘要

Several single-source precursors including In(SOCN{sup}iBu{sub}2){sub}3, In(S{sub}2CNMeHex){sub}3 and Ga(S{sub}2CNMeR){sub}3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. Theα- andβ-In{sub}2S{sub}3 thin films on borosilicate glass andα-Ga{sub}2S{sub}3 thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.