...
首页> 外文期刊>Journal of Physics. Condensed Matter >Spin-orbit splitting in the HgTe surface quantum well
【24h】

Spin-orbit splitting in the HgTe surface quantum well

机译:HgTe表面量子阱中的自旋轨道分裂

获取原文
获取原文并翻译 | 示例
           

摘要

Two-dimensional electron gas at the anodic oxide-HgTe(110) interface is studied experimentally (by the magnetocapacitance spectroscopy method) and theoretically for carrier surface density up to 6 x 10(12) cm(-2). The measurements show the population of up to four subbands with well-resolved Rashba spin splitting in the Fourier transforms, The carrier distribution among the electric subbands agrees with the theory. However, the experimental relative differences of occupancies of spin sub-subbands (0.17-0.3) exceed the calculated ones (0.14). This discrepancy indicates an interface contribution to the spin-orbit splitting. The partial capacitance oscillations for different spin branches in the ground subband differ not only in period but also in amplitude. Because of this, the measured effective cyclotron masses in this subband correspond to the theoretical values for the high-energy spin branch whereas in the excited subbands each corresponds to an average over two branches. [References: 11]
机译:阳极氧化-HgTe(110)界面处的二维电子气被实验研究(通过磁电容光谱法),理论上研究了载流子表面密度高达6 x 10(12)cm(-2)。测量结果表明,在傅立叶变换中,具有良好分辨的Rashba自旋分裂的多达四个子带的数量。电子带之间的载波分布与理论相符。然而,自旋子带的占用率的实验相对差异(0.17-0.3)超过了计算值(0.14)。这种差异表明界面对自旋轨道分裂的影响。接地子带中不同自旋分支的部分电容振荡不仅周期不同,而且幅度也不同。因此,在该子带中测得的有效回旋加速器质量对应于高能自旋分支的理论值,而在受激子带中,每个均对应于两个分支的平均值。 [参考:11]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号