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Magnetoresistance of amorphous indium oxide films on the insulating side near the superconductor-insulator transition

机译:超导体-绝缘体过渡附近绝缘侧的非晶氧化铟膜的磁阻

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摘要

The magnetoresistance (MR) of amorphous indium oxide films on the insulating side near the superconductor-insulator transition was measured. Variable range hopping is evident in the presence of a high enough magnetic field even in the temperature range where simple activation prevails in the absence of a magnetic field, which strongly suggests the existence of localized superconducting granules. Consequently, junction breaking between superconducting granules and pair breaking effects dominate the MR at low enough temperatures. As those effects caused by the local superconductivity on MR decrease rapidly with increasing temperature, an intrastate interaction effect becomes significant. The observed MR is fitted to a theoretical expression which includes junction breaking, pair breaking and intrastate interaction terms. The temperature dependence of the fitting parameters shows qualitative agreement with theoretical expectations. [References: 23]
机译:测量了在超导体-绝缘体过渡附近的绝缘侧上的非晶氧化铟膜的磁阻(MR)。在存在足够高的磁场的情况下,即使在没有磁场的情况下简单激活占主导的温度范围内,变程跳变也很明显,这强烈暗示了局部超导颗粒的存在。因此,在足够低的温度下,超导颗粒之间的结断裂和成对断裂效应占主导地位。由于局部超导性对MR的影响随着温度的升高而迅速降低,因此内部相互作用效应变得很明显。观察到的MR符合理论表达式,包括结断开,成对断开和状态内相互作用项。拟合参数的温度依赖性显示出与理论预期的定性一致性。 [参考:23]

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