HEAT-EMISSION PREVENTING FILM USING MULTILAYERED AMORPHOUS SILICON-INDIUM-OXIDE FILM STRUCTURE

摘要

The present invention relates to a heat-emission preventing film using a multilayered amorphous silicon-indium-oxide film structure, in which an amorphous silicon-indium-oxide film serving as a base layer and a protective layer contain silicon. The heat-emission preventing film includes: a substrate; a first amorphous silicon-indium-oxide film (ISO-1) formed on the substrate as a base layer; an insulation layer formed on the first amorphous silicon-indium-oxide film (ISO); and a second amorphous silicon-indium-oxide film (ISO-2) formed on the insulation layer as a protective layer. Since the amorphous silicon-indium-oxide films, which are free from grain boundary, roughness, and a defect depending on a crystalline structure of an underlayer and a protection layer of silver (Ag) in an existing silver (Ag)-based crystalline transparent oxide multilayered thin film, are used, the heat-emission preventing film has a thickness thinner than a silver layer which is used as the base layer and the protective layer in a conventional multilayer film of crystalline transparent oxide, and also has high conductivity and low emissivity.;COPYRIGHT KIPO 2018