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Electronic structure of the layered ternary carbides Ti2SnC and Ti2GeC

机译:层状三元碳化物Ti2SnC和Ti2GeC的电子结构

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The electronic structure of the layered ternary carbides Ti2SnC and Ti2GeC has been investigated by means of ab initio linear combination of atomic orbital calculations. The calculated band structure shows that the electrical conductivity for both Ti2SnC and Ti2GeC is metallic and anisotropic with a high density of states at the Fermi level. The electrical conductivity of Ti2SnC is, however, higher than that of Ti2GeC. The major factors governing the electronic properties are pd hybridization from Ti 3d and C 2p states. Compared to the structure of TiC, the presence of Sn or Ge changes the Ti-C-Ti-C covalent bond chain into a Ti-C-Ti-Sn or Ti-C-Ti-Ge bond chain through its reaction with Ti, forming the layered structure. [References: 16]
机译:已经通过原子轨道计算的从头开始线性组合研究了层状三元碳化物Ti2SnC和Ti2GeC的电子结构。计算出的能带结构表明,Ti2SnC和Ti2GeC的电导率都是金属的并且是各向异性的,在费米能级具有很高的态密度。但是,Ti2SnC的电导率高于Ti2GeC的电导率。决定电子性能的主要因素是Ti 3d和C 2p态的pd杂化。与TiC的结构相比,Sn或Ge的存在通过与Ti的反应将Ti-C-Ti-C共价键链变成Ti-C-Ti-Sn或Ti-C-Ti-Ge键链,形成分层结构。 [参考:16]

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