Semiconductor wafer with wiring structure for use in e.g. power diode, has coating material with self-supporting, stable-shaped carrier layer and containing ternary carbide, ternary nitride and carbon to cover wiring structure

摘要

Semiconductor wafer has wiring structures formed in lines and columns corresponding to semiconductor chip positions. A coating material (6), that has a self-supporting, stable-shaped carrier layer (4) made of conductive and high-temperature-resistant material, is formed to cover the wiring structure. The coating material contains ternary carbide, ternary nitride and carbon, and has an operating temperature, donor ion concentration and acceptor ion concentration that increase with electrical conductivity. Independent claims are included for: (a) semiconductor component; and (b) semiconductor wafer manufacture.