Copper wiring structure embedded in the cavity of insulating film in semiconductor device and copper wiring structure containing carbon layer between cavity and copper material and manufacturing method thereof

摘要

SUMMARY OF THE INVENTION An object of the present invention is to provide a copper wiring structure in which a copper wiring finely treated with a grooved wiring structure is always formed with high reliability, and a method of manufacturing the same, wherein the conductive carbon layer is an organic interlayer film composed mainly of copper material-carbon. It is formed between the copper wiring- and the organic interlayer film of the groove wiring structure in which a copper material is embedded in the wiring grooves or holes formed in the wiring groove. The conductive carbon layer is formed by forming wiring grooves or holes in a predetermined region of the organic interlayer film and then deforming the inner wall of the wiring grooves or holes by plasma irradiation. The copper wiring of the grooved wiring structure described above is formed by depositing copper on the conductive carbon layer.