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首页> 外文期刊>Journal of Physics. Condensed Matter >Crystal structure, electrical properties and electronic band structure of tantalum ditelluride
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Crystal structure, electrical properties and electronic band structure of tantalum ditelluride

机译:二碲化钽的晶体结构,电学性能和电子能带结构

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摘要

Motivated by the unexpectedly strong influence of the Te atoms on the structural and bonding properties of the transition metal tellurides, we have performed a detailed study of TaTe2. Experimentally, this comprises a crystal structure determination as well as electrical resistivity measurements. The former analysis leads to an accurate update of the structural data reported in the 1960s, while the latter provides evidence for the mainly electronic character of scattering processes leading to the electrical conductivity. In addition, the electronic properties of TaTe2 have been calculated using the TB-LMTO method. The partial density of states reflects the close connection of the Ta zigzag chains and the Te-Te network. Tills finding explains the charge transfer in the system in a rather simple way. The orthogonal-orbital character of the bands proved the existence of pi-bonds. The Fermi-surface study supports the interpretation of the experimental resistivity measurements. [References: 32]
机译:受Te原子对过渡金属碲化物的结构和键合性质的出乎意料的强烈影响的推动,我们对TaTe2进行了详细的研究。在实验上,这包括晶体结构确定以及电阻率测量。前者的分析导致对1960年代报道的结构数据的准确更新,而后者则为散射过程导致电导率的主要电子特性提供了证据。此外,已使用TB-LMTO方法计算了TaTe2的电子性质。状态的部分密度反映了Ta字形链和Te-Te网络的紧密联系。耕种发现以相当简单的方式解释了系统中的电荷转移。这些带的正交轨道特征证明了π键的存在。费米表面研究支持对实验电阻率测量的解释。 [参考:32]

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