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Correlation between perpendicular magnetic anisotropy and microstructure in TbFeCo and TbFeCo-SiO2 films

机译:TbFeCo和TbFeCo-SiO2薄膜的垂直磁各向异性与微观结构的相关性

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摘要

Both TbFeCo and TbFeCo-SiO2 films were prepared by magnetron sputtering. At a film thickness of less than 75 nm, TbFeCo-SiO2 films have coercivity and perpendicular magnetic anisotropy larger than those of TbFeCo films and vice versa at a film thickness of more than 75 nm. This phenomenon can be attributed to enhancement in the degree of preferred orientation of TbFeCo grains. For these two series of samples, the magnetization reversal process is accompanied by the combination of pinned domain wall motion (DWM) and domain rotation. The weak pinning of DWM cannot be excluded.
机译:TbFeCo和TbFeCo-SiO2膜都是通过磁控溅射制备的。在小于75nm的膜厚度下,TbFeCo-SiO 2膜的矫顽力和垂直磁各向异性大于TbFeCo膜,并且反之亦然,在大于75nm的膜厚度下。该现象可归因于TbFeCo晶粒的优选取向度的增强。对于这两个系列的样本,磁化反转过程伴随着固定畴壁运动(DWM)和畴旋转的组合。不能排除DWM的弱固定。

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