Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

摘要

Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of carrier distribution within the localized QD states to the luminescence linewidth decreases after ion-implantation enhanced intermixing. The effect of doses and types of ions used for implantation were also investigated.