The purpose of the present study was to examine the possibility of laser-machining of CuInSe2-based photovoltaic devices. Therefore, ablation thresholds and ablation rates of ZnO, CuInSe2 and Mo thin films have been measured for irradiation with nanosecond laser pulses of ultraviolet and visible light and subpicosecond laser pulses of a Ti: sapphire laser. The experimental results were compared with the theoretical evaluation of the samples heat regime obtained from numerical calculations. In addition, the photo-electrical properties of the solar cells were measured before and after laser-machining. Scanning electron microscopy and energy dispersive x-ray analyses were employed to characterize the laser-induced ablation channels. As a result, two phenomena were found to limit the laser-machining process: (i) residues of Mo that were projected onto the walls of the ablation channel and (ii) the metallization of the CuInSe2 semiconductor close to the channel. Both effects lead to a shunt in the device that decreases the photovoltaic efficiency. As a consequence of these limiting effects, micromachining of CuInSe2-based solar cells was not possible with nanosecond laser pulses. Only subpicosecond laser pulses provided selective or complete ablation of the thin layers without a relevant change in the photoelectrical properties.
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