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首页> 外文期刊>Journal of Photopolymer Science and Technology >Graded Spin-on Organic Bottom Antireflective Coating for High NA Immersion Lithography
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Graded Spin-on Organic Bottom Antireflective Coating for High NA Immersion Lithography

机译:用于高NA浸没光刻的渐变旋涂式有机底部抗反射涂层

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A spin-on organic Graded Bottom AntiReflective Coating(GBARC)was developed to enable appropriate reflectivity control during advanced photoresist patterning using 193nm immersion lithography up to 1.35 NA(limits of hyper-NA lithography using water as immersion fluid).This novel technology constitutes a simplified reflectivity control approach over more conventional schemes such as dual-layer BARCs,trilayer stacks or single layer BARCs.The GBARC layer is formed upon vertical phase separation of optically tuned polymeric components present in a GBARC casting solution during the spin-coating and post-applied baking steps.The substrate surface energy is found to dictate the direction of the spatial assembly for any given phase-separating polymer blend combination.The index of refraction(n~(193))of the GBARC polymeric components is approximately matched to that of the photoresist and substrate layers for optimum reflectivity control,while the extinction coefficient(k~(193))increases gradually towards the substrate.Analytical characterization of the varying optical constants throughout the GBARC film is achieved by Variable Angle Spectroscopic Ellipsometry(VASE)which allows for a quantitative description of the optical gradient present within the GBARC layer.The optical gradient sharpness is shown to be impervious to total GBARC thickness variations at constant relative polymer mass loading as well as changes in the relative mass loading of polymeric components at fixed total GBARC thickness.Also,the link between image profile afforded by various levels of reflectivity control and the mechanical stability of photoresist nanostructures is investigated at 1.2NA by designing GBARC formulations with variable residual reflectivity.Substrate reflectivity in excess of 1% is shown to limit the focus-exposure window due to pattern collapse.Last,adhesion of 193 nm photoresist patterns to a GBARC film is compared to a commercially available single layer BARC.Enhanced adhesion is demonstrated in the case of the GBARC surface,despite the low surface energy that typifies GBARC layers.
机译:开发了一种旋涂式有机梯度底部抗反射涂层(GBARC),以在使用193nm浸没式光刻技术(最高1.35 NA)(使用水作为浸没液的超NA光刻技术的局限性)进行高级光刻胶图案化时实现适当的反射率控制。简化了对反射率的控制方法,比起传统的方案,例如双层BARC,三层堆叠或单层BARC。GBARC层是在旋涂和后涂过程中,对存在于GBARC流延溶液中的光学调谐聚合物组分进行垂直相分离后形成的。对于任何给定的相分离聚合物共混物组合,发现基底表面能决定了空间组装的方向.GBARC聚合物组分的折射率(n〜(193))近似等于光刻胶和基材层可实现最佳反射率控制,而消光系数(k〜(193))则逐渐增大整个GBARC薄膜中变化的光学常数的分析表征是通过可变角度光谱椭圆仪(VASE)实现的,该定量分析可以定量描述GBARC层内存在的光学梯度。在恒定的相对聚合物质量负载下总GBARC厚度的变化以及在固定的总GBARC厚度下聚合物组分的相对质量负载的变化是不渗透的。此外,各种级别的反射率控制所提供的图像轮廓与光刻胶的机械稳定性之间的联系通过设计具有可变残留反射率的GBARC配方,在1.2NA下研究了纳米结构。显示出基材反射率超过1%会限制由于图案塌陷而导致的焦点曝光窗口。最后比较了193 nm光刻胶图案对GBARC膜的附着力到市售的单层BARC。尽管具有GBARC表面的低表面能是GBARC层的典型特征,但在GBARC表面上还是如此。

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