Analysis of Cross-linking Reactions for High Sensitivity and Non-antimonite Permanent Photoresist for MEMS

摘要

The permanent photoresist is a versatile material to fabricate three-dimensional structures for the Micro Electro Mechanical Systems(MEMS)field.The replacement to non-antimonite initiators is ongoing toward the mass manufacturing.We investigate on the reaction mechanism of cross-linking formulating chemically amplified negative-tone photoresists by adopting an infrared spectra measurement system.The consumption of epoxy group is monitored during post exposure bake(PEB).The patterning profile of 40 mu m lines with 30 urn thickness indicates no significant difference on the photoresist formulation.However,the FT-IR measurement results and the simulation models describe the difference in cross-linking behavior in tested photoresists.The activation energy of cross-linking reaction is also calculated.The impact on cross-linking reaction from the residual solvent in photoresist film is also discussed utilizing a Thermal Desorption Spectrometer(TDS).