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首页> 外文期刊>Journal of molecular recognition: JMR >Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates.
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Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates.

机译:碳化硅和金刚石基底上中枢神经系统细胞形态的原子力显微镜分析。

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摘要

Brain machine interface (BMI) devices offer a platform that can be used to assist people with extreme disabilities, such as amyotrophic lateral sclerosis (ALS) and Parkinson's disease. Silicon (Si) has been the material of choice used for the manufacture of BMI devices due to its mechanical strength, its electrical properties and multiple fabrication techniques; however, chronically implanted BMI devices have usually failed within months of implantation due to biocompatibility issues and the fact that Si does not withstand the harsh environment of the body. Single crystal cubic silicon carbide (3C-SiC) and nanocrystalline diamond (NCD) are semiconductor materials that have previously shown good biocompatibility with skin and bone cells. Like Si, these materials have excellent physical characteristics, good electrical properties, but unlike Si, they are chemically inert. We have performed a study to evaluate the general biocompatibility levels of all of these materials through the use of in vitro techniques. H4 human neuroglioma and PC12 rat pheochromocytoma cell lines were used for the study, and polystyrene (PSt) and amorphous glass were used as controls or for morphological comparison. MTT [3-(4,5-Dimethylthiazol-2-Yl)-2,5-Diphenyltetrazolium Bromide] assays were performed to determine general cell viability with each substrate and atomic force microscopy (AFM) was used to quantify the general cell morphology on the substrate surface along with the substrate permissiveness to lamellipodia extension. 3C-SiC was the only substrate tested to have good viability and superior lamellipodia permissiveness with both cell lines, while NCD showed a good level of viability with the neural H4 line but a poor viability with the PC12 line and lower permissiveness than 3C-SiC. Explanations pertaining to the performance of each substrate with both cell lines are presented and discussed along with future work that must be performed to further evaluate specific cell reactions on these substrates.
机译:脑机接口(BMI)设备提供了一个平台,可用于协助极度残疾的人,例如肌萎缩性侧索硬化症(ALS)和帕金森氏病。硅(Si)由于其机械强度,电性能和多种制造技术而成为制造BMI器件的首选材料。然而,由于生物相容性问题以及硅不能承受人体的恶劣环境,长期植入的BMI设备通常在植入后的几个月内就失败了。单晶立方碳化硅(3C-SiC)和纳米晶金刚石(NCD)是半导体材料,以前已显示出与皮肤和骨骼细胞的良好生物相容性。像硅一样,这些材料具有出色的物理特性,良好的电性能,但与硅不同,它们在化学上是惰性的。我们已经进行了一项研究,以通过使用体外技术来评估所有这些材料的一般生物相容性水平。使用H4人神经胶质瘤和PC12大鼠嗜铬细胞瘤细胞系进行研究,并将聚苯乙烯(PSt)和无定形玻璃用作对照或进行形态比较。进行MTT [3-(4,5-二甲基噻唑-2-Yl)-2,5-二苯基四唑鎓溴化物]测定,以确定每种底物的一般细胞活力,并使用原子力显微镜(AFM)定量分析其上的一般细胞形态。基质表面以及基质对片状脂膜延伸的允许性。 3C-SiC是唯一测试的在两种细胞系中均具有良好生存力和卓越的片状脂溢性介导性的底物,而NCD在神经H4系中显示出良好的生存力水平,但在PC12系中显示出较差的生存率,并且比3C-SiC更低。提出并讨论了有关具有两种细胞系的每种底物性能的说明,以及今后必须进行的工作以进一步评估这些底物上的特定细胞反应。

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