Analysis of even and odd modes of a two-dimensional photonic crystal at Si/SiO/Cu interface

摘要

We present a careful analysis of field characteristics in two-dimensional photonic crystals with square and hexagonal symmetry designed in a Si/SiO2/Cu heterostructure. A special attention is devoted to frequencies close to photonic band gap. Following the symmetry classification in odd and even modes, their field characteristics are studied. The material prepared in a dedicated deposition chamber in ultra-high vacuum by annealing the Si/SiO2 substrate and subsequent deposition of 10? copper in order to prevent the sample oxidation, allows the study of the photonic characteristics of the copper/silicon oxide/silicon interface. The chemical state of the Cu/SiO/Si system is addressed by photoelectron spectroscopy which allows us to deduce the amount of crystalline Si and amorphous oxide. In this manner a precise estimation of the dielectric constant of the materials is possible. It is expected that at the interface with copper, a strong confinement of radiation should appear due to high reflectivity of copper.