Modeling and experimental validation of the performance of a silicon XY-microstage driven by PZT actuators

摘要

In this paper, the design and evaluation of silicon-based PbZrTiO_3 (PZT) driven XY-microstages with total dimensions of 20 × 20 × 0.4 mm~3 are presented. The PZT actuator has the advantage of having high accuracy and high intrinsic resonance frequency. However, its displacement is very small; thus Moonie amplification mechanisms are integrated to magnify the displacement. Finite element method simulation is carried out to obtain the microstage performance and identify its design parameters. It is demonstrated that an amplification factor of up to 18 times is possible using the silicon Moonie amplification mechanism, resulting in displacements of 82μm and 60 μm at an applied voltage of 70 V for the X and Y directions, respectively. Furthermore, this microstage produces resonance frequencies of 261 Hz and 642 Hz in the X and Y directions, respectively.