Evaluation of platinum as a structural thin film material for RF-MEMS devices

摘要

Surface micromachined metal armatures are commonly used for MEMS applications of which RF-MEMS is the most well known. In most cases metals with a high conductivity, such as aluminum or gold, are used. These metals often have a low melting point and therefore have a low thermal stability and show plastic deformation of the structures at relatively low temperatures (<200℃). High melting point metals, such as platinum, are expected to show plastic deformation only at higher temperatures which makes them interesting for use as a structural layer in RF-MEMS devices. In this paper, we present a technology to realize suspended platinum structures by means of surface micromachining. An improved lift-off process allows patterning 1μm Pt films on a polyimide sacrificial layer. A comparison of the characteristics and armature resonance frequencies between RF-MEMS switches with Pt armatures and AlCu{sub}(0.5%) alloy armatures reveals an increased thermal stability for the former up to at least 250℃. This enables zero-level packaging of switches at relative high temperatures without affecting their performances. The lower conductivity of Pt compared to AlCu{sub}(0.5%) does not lead to a significant increase in RF losses. Implementing AlN as a dielectric material, the Pt-based capacitive shunt switches reported in this paper showed lifetimes in excess of 5×10{sup}7 cycles under standard testing conditions.