A method for forming a platinum thin film having an antioxidant function on a substrate and an electronic device having a platinum thin film formed by the method

摘要

A platinum thin film mainly used as a lower electrode of a capacitor of a DRAM cell or a nonvolatile ferroelectric memory cell is deposited in two stages. The first thickness portion is deposited in an inert gas atmosphere (Ar, Ne, Kr, Xe) Is deposited in an inert gas atmosphere containing at least one of oxygen, ozone, nitrogen, N ₂ O, and a mixed gas thereof. The platinum thin film is heat treated in a vacuum atmosphere to remove oxygen and / or nitrogen introduced during the deposition of the second thickness portion. The thermally treated platinum film prevents the formation of oxides on the functional interlayers such as diffusion barrier layers or adhesive layers disposed below the platinum thin film lower electrode.