Through-wafer electrical connections are becoming increasingly important for three-dimensional integrated circuits, microelectromechanical systems packaging and radio-frequency components, In this paper, we report our current results on the formation of through-wafer metal plugs using the copper electroplating technique. Several approaches for via filling are investigated, such as filling before or after wafer thinning, Among the methods experimented, the one-side Cu plating and bottom-up filling appears to be the most suitable technique for copper filling into high aspect ratio vias. Using this method, we demonstrate the successful filling of vias with an aspect ratio of up to 7. Copper plugs as small as 20 x 20 mum(2) are obtained uniformly over 4 inch Si wafers. [References: 8]
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机译：晶圆上的电连接对于三维集成电路，微机电系统封装和射频组件变得越来越重要。在本文中，我们报告了我们目前使用铜电镀技术形成晶圆上金属插头的结果。研究了几种通孔填充方法，例如在晶圆变薄之前或之后进行填充。在实验的方法中，单面镀铜和自下而上填充似乎是最适合将铜填充到高深宽比过孔中的技术。使用这种方法，我们演示了成功填充纵横比高达7的通孔的方法。在4英寸的Si晶片上均匀地获得了小到20 x 20 mum（2）的铜塞。 [参考：8]
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