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Selective wet-etching of undoped and silver photodoped amorphous thin films of chalcogenide glasses in inorganic alkaline solutions

机译:在无机碱性溶液中选择性湿法蚀刻未掺杂和银掺杂的硫族化物玻璃的非晶薄膜

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摘要

The unexposed/exposed, Ag-rich (exposed)/Ag-poor (unexposed) and amorphous (unexposed)/crystallized (exposed) parts of vacuum evaporated amorphous chalcogenide films of composition As33S67, As33S50Se17, As33S33.5Se33.5, As33S17Se50, As33Se67, Ag-x(As33S67) (100-x) and Ag-x(As33S33.5Se33.5)100-x were selectively etched in water solutions of inorganic alkaline substances (NaOH, Na2S, (NH4)(2)S, Na2CO3 and NaCN). Different etching rates for exposed and unexposed parts were found depending upon the sample composition, type of etchant and its concentration. A resolution coefficient, gamma, was confirmed by selectively etched films after their exposure through a gray-scale photomask with microlenses array motives. (c) 2006 Elsevier B.V. All rights reserved.
机译:组成为As33S67,As33S50Se17,As33S33.5Se33.5,As33S17Se50,As33Se67的真空蒸发非晶硫族化物薄膜的未暴露/已暴露,富Ag(已暴露)/ Ag贫(未暴露)和非晶(未暴露)/结晶(暴露)部分。 ,Ag-x(As33S67)(100-x)和Ag-x(As33S33.5Se33.5)100-x在无机碱性物质(NaOH,Na2S,(NH4)(2)S,Na2CO3和NaCN)。根据样品的组成,蚀刻剂的类型及其浓度,可以发现曝光和未曝光部分的蚀刻速率不同。通过在具有微透镜阵列动机的灰度级光掩模曝光后选择性蚀刻膜,可以确认分辨率系数γ。 (c)2006 Elsevier B.V.保留所有权利。

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