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Effects of post-deposition treatments on the photoactivity of CuInSe2 thin films deposited by the induced co-deposition mechanism

机译:沉积后处理对诱导共沉积机制沉积CuInSe2薄膜光活性的影响

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摘要

CuInSe2 thin films were electrodeposited potentiostatically from acidic aqueous solutions containing CuCl, InCl3 and SeO2. SCN- ions were used as complexing agents for Cu+ ions in order to shift their reduction potentials in the negative direction. Different deposition solutions and post-deposition treatments were compared. The films were characterized by means of energy dispersive X-ray spectrometry, scanning electron microscopy, X-ray diffraction, time-of-flight elastic recoil detection analysis, electrochemical quartz crystal microbalance, cyclic photovoltammetry and photoelectrochemical measurements. The as-deposited films were found to be p-type. The photoactivity was lost after heat treatment, but etching in 0.5 M KCN regenerated it rapidly. [References: 18]
机译:从含有CuCl,InCl3和SeO2的酸性水溶液中恒电位电沉积CuInSe2薄膜。 SCN-离子用作Cu +离子的络合剂,以便将其还原电势向负方向移动。比较了不同的沉积溶液和沉积后处理。通过能量色散X射线光谱法,扫描电子显微镜,X射线衍射,飞行时间弹性反冲检测分析,电化学石英晶体微量天平,循环伏安法和光电化学测量来表征这些膜。发现沉积的膜是p型的。热处理后,光敏性丧失,但在0.5 M KCN中进行蚀刻会迅速将其再生。 [参考:18]

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