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Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

机译:芳族硫杂环衍生物逐渐氧化对多级存储数据存储性能的影响

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摘要

Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage. By reserving the terminal electron-accepting cyano moiety, the sulphur atom in phenothiazine (PTZ) was adjusted to different oxidation states, such as sulfide, sulfoxide, and sulfone, to tune the electron-accepting ability (J. Liu et al., Chem. Mater., 2008, 20, 4499). Therefore, a differentiated trap depth was achieved between the central sulphur-containing group and the terminal cyano groups when the molecules were charged. Devices based on PTZO-CN exhibited excellent ternary memory behaviour, while those based on PTZ-CN or PTZDO-CN only showed binary memory characteristics. Therefore, it is a viable approach to easily obtain multilevel memory organic materials by adjusting the difference between two electron-withdrawing groups in the conjugated molecular backbone through gradual oxidation of the central sulphur atom to achieve ternary memory performance.
机译:设计并成功合成了来自吩噻嗪(PTZ),PTZ-CN,PTZO-CN和PTZDO-CN的三个对称共轭小分子,并成功地合成了多级存储数据。通过保留末端的电子接受氰基部分,将吩噻嗪(PTZ)中的硫原子调整为不同的氧化态,例如硫化物,亚砜和砜,以调节电子接受能力(J.Liu等,Chem。 Mater。,2008,20,4499)。因此,当分子带电时,在中心含硫基团和末端氰基基团之间获得了不同的捕集深度。基于PTZO-CN的设备表现出出色的三元存储性能,而基于PTZ-CN或PTZDO-CN的设备仅显示二进制存储特性。因此,通过中心硫原子的逐渐氧化来调节共轭分子主链中两个吸电子基团之间的差异,从而容易地获得多级存储有机材料是可行的方法,以实现三元存储性能。

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