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Effects of aromatic spacers on film morphology and device memory performance based on imidazole-pi-triphenylamine derivatives

机译:基于咪唑-三苯胺衍生物的芳香族间隔基对膜形貌和器件存储性能的影响

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摘要

Two imidazole-pi-triphenylamine derivatives TPAPPI and TPATPI, connected via different aromatic spacers (i.e., phenyl or thienyl), were synthesized. The photophysical and electrochemical properties, and memory behaviors of the two donor-pi-acceptor molecules were comparatively investigated. The replacement of phenyl with thienyl leads to a much better nanoscale morphology after thermal treatment, as characterized by atomic force microscopy (AFM). Sandwich devices based on TPAPPI and TPATPI both exhibited the nonvolatile WORM characteristic but the TPATPI-based device showed a higher ON/OFF ratio and a lower switching voltage. Simulation results showed that the insertion of the thienyl spacer between the donor and acceptor moieties leads to smaller torsion between the imidazole ring and TPA moiety, which indicates a smaller charge transfer barrier and a higher extent of charge transfer (CT). This comparative study of tuning the properties of conjugated D-pi-A molecules via aromatic pi-spacers may be an alternative approach for the design and study of future high-performance memory devices based on new D-pi-A type materials.
机译:合成了两个咪唑-对-三苯胺衍生物TPAPPI和TPATPI,它们通过不同的芳族间隔基(即苯基或噻吩基)连接。比较研究了两个供体-pi-受体分子的光物理和电化学性质以及记忆行为。如原子力显微镜(AFM)所表征,用噻吩基取代苯基可在热处理后产生更好的纳米级形态。基于TPAPPI和TPATPI的三明治设备均具有非易失性WORM特性,但基于TPATPI的设备显示出较高的开/关比和较低的开关电压。模拟结果表明,噻吩间隔基在供体和受体部分之间的插入导致咪唑环和TPA部分之间的扭转较小,这表明电荷转移壁垒较小,电荷转移(CT)程度更高。通过芳香族pi间隔物调节共轭D-pi-A分子特性的比较研究可能是设计和研究基于新型D-pi-A型材料的未来高性能存储设备的替代方法。

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