首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >One step deposition of PEDOT films by plasma radicals assisted polymerization via chemical vapour deposition
【24h】

One step deposition of PEDOT films by plasma radicals assisted polymerization via chemical vapour deposition

机译:通过化学气相沉积通过等离子体自由基辅助聚合一步沉积PEDOT膜

获取原文
获取原文并翻译 | 示例
       

摘要

The careful control of the electrode interface in organic devices is one of the key factors that strongly affects the application of semiconducting polymers to a wide range of organic devices. In this work, a novel vapour phase technique, named plasma radicals assisted polymerization via chemical vapour deposition, is presented and studied to deposit intrinsically conducting polymer films by combining the advantages of current CVD techniques. This innovative concept is based on the concomitant but physically separated injection of low-energy plasma radical initiators and monomer molecules into the deposition chamber where the temperature and the pressure are controlled, which allows the uniform deposition of films on a large surface. As a case study, poly(3,4-ethylenedioxythiophene) synthesis was successfully carried out with an improved growth rate of 2 times, compared to established vapour phase synthesis technologies. Films stable over one year show conductive properties in the range of a few S cm(-1), thereby opening avenues for the large scale manufacturing of functional and stable organic thin films with tailored interfaces.
机译:仔细控制有机器件中的电极界面是严重影响半导体聚合物在各种有机器件中的应用的关键因素之一。在这项工作中,提出并研究了一种新型的气相技术,称为等离子体自由基,通过化学气相沉积辅助聚合,并结合了当前CVD技术的优势来沉积本征导电的聚合物膜。此创新概念基于将低能等离子体自由基引发剂和单体分子伴随但物理地分开注入到沉积室中的情况,在该室中控制温度和压力,从而可以在大表面上均匀沉积膜。作为案例研究,与已建立的气相合成技术相比,成功进行了聚(3,4-乙撑二氧噻吩)的合成,生长速率提高了2倍。一年以上稳定的膜在几S cm(-1)的范围内显示出导电性能,从而为大规模生产具有定制界面的功能性和稳定有机薄膜开辟了道路。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号