One Step Aluminium induced crystal growth of nc-Si thin films using electron beam electron beam excited plasma chemical vapour deposition

摘要

Aluminium induced crystal growth is used to increase the as-deposited grain size produced by Electron Beam Excited Plasma Chemical Vapour Deposition (EBEP-CVD) A layer of aluminium is deposited on quartz immediately prior to the EBEP-CVD of silicon at temperatures below 420°C Analysis by X-ray diffraction shows that the as-deposited grain size is increase from 10 nm to a maximum 69 nm. Such grain size increase are necessary for the viability of EBEP-CVD films for photovoltaic device application. In difference to the more common aluminium induced crystallisation (AIC), no separate annealing step is required, and no interchange of layers was observed.