High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

摘要

Transparent and flexible thin film transistors (TFTs) with high performance based on solution processed graphene nanosheets (GNSs)-amorphous indium-gallium-zinc-oxide (a-lGZO) composites have been developed. A high electron mobility of 23.8 cm~2 V~(-1) s~(-1) has been achieved, which is about thirty times higher than those of the pristine a-IGZO TFTs (0.82 cm~2 V~(-1) s~(-1)) and hydrogenated amorphous silicon (<1 cm~2 V~(-1) s~(-1)). The on/off current ratio remains in a high order of 106 demonstrating the sustainability of the TFT devices. In addition, transparent GNSs-a-IGZO TFTs with a Ta2O5 dielectric layer show superior resistance to mechanical bending with the variation of only 8% in mobility after 100 times of repeated cyclic bending compared with the degradation of more than 70% for the pristine a-IGZO device. Our results demonstrate that GNSs not only play an important role in forming a conducting network in the active matrix, but also enhance the mechanical bending stability of GNSsa-IGZO composites. It therefore paves a key step to develop large-scale applications for next-generation transparent and flexible electronics.