...
首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Capsule-embedded reduced graphene oxide: synthesis, mechanism and electrical properties
【24h】

Capsule-embedded reduced graphene oxide: synthesis, mechanism and electrical properties

机译:胶囊包埋的还原氧化石墨烯:合成,机理和电性能

获取原文
获取原文并翻译 | 示例
           

摘要

We report the synthesis of capsule-embedded reduced graphene oxide (rGO) by photocatalytic reduction in the presence of peanut shaped α-Fe2O3 particles under visible light. This process is able to produce highly stabilized water dispersible rGO without the help of a stabilizer, which is suitable to make thin films on a glass substrate by the drop casting method. In addition, the evolution of the morphology with different visible light exposure times ranging from 5 to 120 minutes reveals that the catalyst leads to transformation of a few rGO sheets into capsules via a core-shell structure. These capsules are stable on the rGO sheet at a vacuum of 10~(-9) Torr, but unstable under vacuum annealing at 400 °C and 10~(-5) Torr that created impressions on the rGO film. The bandgap of the capsule-embedded rGO decreases non-linearly with the visible light exposure time; from 2.47 eV at 5 min to 1.73 eV at 120 min. The vacuum annealed rGO films on glass substrates show an electrical conductivity of 2000 S m~(-1) at 300 K and the conduction is dominated by two-dimensional variable range hopping. The formation of capsules is described based on electrostatic interactions in association with the dipole force of the monodispersed peanut shaped α-Fe2O3 particles, whereas, the bandgap opening and high conductivity are attributed to the residual oxygen functional groups such as carbonyl (>C=O) and epoxy (C-O-C) on the rGO, in addition to the modulated surface morphology.
机译:我们报告了在可见光下花生形α-Fe2O3颗粒存在下通过光催化还原合成的胶囊包埋的还原氧化石墨烯(rGO)。该方法无需稳定剂即可产生高度稳定的水分散性rGO,该稳定剂适用于通过滴铸法在玻璃基板上制备薄膜。此外,在5到120分钟范围内的不同可见光暴露时间下,形态的演变表明,该催化剂导致一些rGO片通过核-壳结构转变为胶囊。这些胶囊在rGO片上的真空度为10〜(-9)托时是稳定的,但在400°C和10〜(-5)Torr的真空退火下却不稳定,这会在rGO薄膜上留下印痕。嵌入胶囊的rGO的带隙随可见光暴露时间呈非线性下降。从5分钟时的2.47 eV到120分钟时的1.73 eV。玻璃基板上的真空退火rGO薄膜在300 K时显示出2000 S m〜(-1)的电导率,并且其传导主要由二维可变范围跳变控制。基于静电相互作用与单分散花生形α-Fe2O3颗粒的偶极力相关联来描述胶囊的形成,而带隙开口和高电导率归因于残余的氧官能团,例如羰基(> C = O )和rGO上的环氧树脂(COC),以及调制后的表面形态。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号