Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells

摘要

Efficient lead halide perovskite solar cells have been realized using SnO2 as electron selective layers (ESLs). Here, we report on the effects of the annealing temperature of solution-processed SnO2 ESLs on the performance of perovskite solar cells. We find that the cells using low-temperature annealed SnO2 (LT-SnO2) ESLs outperform the cells using high-temperature annealed SnO2 (HT-SnO2) ESLs, exhibiting higher open circuit voltages and fill factors. Structural, electrical, optical, and electrochemical characterizations reveal the origin of the performance differences: LT-SnO2 produces better film coverage, wider band gap, and lower electron density than that of HT-SnO2. The confluence of these properties results in more effective transportation of electrons and blocking of holes, leading to lower interface recombination. Therefore, LT-SnO2 ESLs are preferred for manufacturing perovskite solar cells on flexible substrates.