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Area-selective ZnO thin film deposition on variable microgap electrodes and their impact on UV sensing

机译:可变微隙电极上的区域选择性ZnO薄膜沉积及其对紫外线感应的影响

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摘要

ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask.The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and Keithley SourceMeter, respectively. The current-voltage (I-V) characterization was performed to investigate the effect ofUVlight on the fabricated devices.The ZnO fabricated sensors showed a photo to dark current (I_(ph)/I_d) ratios of 6.26 for 30 μm and 5.28 for 43μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1V, the response time was observed to be 4.817s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively.The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.
机译:使用溶胶-凝胶旋涂技术在图案化的金电极上沉积ZnO薄膜。使用传统的光刻工艺通过零间隙镀铬掩模在蝶形拓扑中获得30和43μm的可变微间隙。通过X射线衍射(XRD)表征沉积薄膜的结构,形态和电学性能,扫描电子显微镜(SEM)和吉时利SourceMeter。进行电流-电压(IV)表征以研究紫外线对制成的器件的影响.ZnO制成的传感器在30μm的间隙电极中的光暗电流比(I_(ph)/ I_d)为6.26,在43μm的间隙电极中为5.28。间距。观察到两个装配好的传感器的动态响应,直到1V都具有良好的重现性。在施加1V电压时,对于30和43μm的间隙,响应时间分别为4.817s和3.704 s,恢复时间分别为0.3738和0.2891 s。低工作电压下的信号检测表明:所制造的传感器可以用于具有低功耗的小型设备。

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