The Effect of Homogenous and Inhomogeneous Broadening and Gain Compression Factor on Dynamical Characteristics and Modulation of Tunneling Injection InGaAs/GaAs Quantum Dot Lasers

摘要

The effect of homogenous and inhomogeneous broadening as well as gain compression on dynamic properties of InGaAs/GaAs Quantum Dot lasers have been studied based on rate equation model relating of two-state lasing. In our rate equation model, the possibility of tunneling to both excited and ground states is taken into account. They tunnel directly or with help of phonon to ES1 and GS. The dynamic properties like output power versus current, photon number versus time, and small signal modulation response function for different homogenous and inhomogeneous broadening and gain compression have been studied numerically. The important factor to limit the modulation bandwidth is capture of carriers from WL to QD states and also filling the states and relaxation between quantum energy states of QD. In this model Capture of carriers from WL reaches to minimum values So, the modulation bandwidth is independent from Gamma(hom) and epsilon(m). The results showed that tunneling injection can enhance the laser efficiency. Also, modulation bandwidth can be optimized in tunneling injection which is important in fiber optic communication.