Quantum Capacitance Effect on Bilayer Graphene Nanoribbon Based Nanoscale Transistors

摘要

Graphene become a gifted potential material to be applied in nanoelectronic devices and biosensor applications because its unique properties such as excellent carrier charge mobility and high stability. Compared to the carbon nanotubes (CNTs), illustrates many advantages such as, flexibility, transparent electrodes, low production cost and high surface area so that has been used in many applications, such as batteries, energy storage, catalytic devices and biosensors. Here, the first subband energy of bilayer graphene nanoribbon (BGNS) is investigated. By this model bilayer graphene nanoribbon quantum capacitance is a function of normalized Fermi energy. Based on the presented model normalized Fermi energy in the non-degenerate regime is modelled. The analytical model indicates that for normalized Fermi energy more than zero, non-degenerate approximations can be applied.